Soft X-ray angle-resolved photoemission spectroscopy of heavily boron-doped superconducting diamond films

Science and Technology of Advanced Materials

Volumn 7, Issue SUPPL. 1, 2006, Pages 12-16

  Yokoya, T ^a   Nakamura, T ^b   Matushita, T ^b   Muro, T ^b   Okazaki, H ^a   Arita, M ^c   Shimada, K ^c   Namatame, H ^c   Taniguchi, M ^c   Takano, Y ^d   Nagao, M ^d   Takenouchi, T ^e   Kawarada, H ^e   Oguchi, T ^c  

^a OKAYAMA UNIVERSITY   (Japan)

^b JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^c HIROSHIMA UNIVERSITY   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^e WASEDA UNIVERSITY   (Japan)

Author keywords

Angle resolved photoemission; Band structure; Diamond; Heavily boron doped; Hole; Superconductivity

Indexed keywords

BAND STRUCTURE; BORON; DOPING (ADDITIVES); FERMI LEVEL; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SPECTROSCOPIC ANALYSIS; SUPERCONDUCTING MATERIALS; SUPERCONDUCTIVITY;

BORON DOPING; BRILLOUIN ZONE; SOFT X RAY ANGLERESOLVED PHOTOEMISSION SPECTROSCOPY (SXARPES); VALENCE BAND;

DIAMOND FILMS;

EID: 33751245572     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.stam.2005.11.012     Document Type: Article

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