Phase transformation of single crystal silicon induced by grinding with ultrafine diamond grits

Scripta Materialia

Volumn 64, Issue 2, 2011, Pages 177-180

  Zhang, Zhenyu ^a   Wu, Yueqin ^a   Guob, Dongming ^b   Huang, Han ^a  

^a UNIVERSITY OF QUEENSLAND   (Australia)

^b DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Nanocrystalline microstructure; Phase transformations; Plastic deformation; Semiconductors; Transmission electron microscopy (TEM)

Indexed keywords

ELECTRON MICROSCOPY; GRINDING (MACHINING); HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; INTERMETALLICS; MONOCRYSTALLINE SILICON; NANOCRYSTALS; PHASE TRANSITIONS; PLASTIC DEFORMATION; SEMICONDUCTOR MATERIALS; SILICON; SILICON WAFERS; SINGLE CRYSTALS; TRANSMISSION ELECTRON MICROSCOPY; WIDE BAND GAP SEMICONDUCTORS;

AMORPHOUS SI; GRINDING CONDITIONS; GRINDING PROCESS; HIGH-PRESSURE PHASE; NANOCRYSTALLINE MICROSTRUCTURES; SINGLE CRYSTAL SILICON; TRANSFORMATION PATTERNS; ULTRAFINE DIAMOND;

AMORPHOUS SILICON;

EID: 79251613383     PISSN: 13596462     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.scriptamat.2010.09.038     Document Type: Article

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