Effect of III-nitride polarization on VOC in p-i-n and MQW solar cells

Physica Status Solidi - Rapid Research Letters

Volumn 5, Issue 2, 2011, Pages 86-88

  Namkoong, Gon ^a   Boland, Patrick ^a   Bae, Si Young ^b   Shim, Jae Phil ^b   Lee, Dong Seon ^b   Jeon, Seong Ran ^c   Foe, Kurniawan ^a   Latimer, Kevin ^a   Doolittle, W Alan ^d  

^a Old Dominion University   (United States)

^b Gwangju Institute of Science and Technology (GIST)   (South Korea)

^c Korea Photonics Technology Institute (KOPTI)   (South Korea)

^d GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

InGaN; Multi quantum well structures; P i n structures; Piezoelectric polarization; Polarization; Solar cells

Indexed keywords

ENERGY BAND STRUCTURE; III-NITRIDE; INGAN; MULTI-QUANTUM WELL STRUCTURES; MULTIQUANTUM WELLS; NON-POLAR; P-I-N STRUCTURE; PIEZOELECTRIC POLARIZATIONS; SPONTANEOUS POLARIZATIONS;

BAND STRUCTURE; ELECTRIC FIELDS; NITRIDES; OPEN CIRCUIT VOLTAGE; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; POLARIZATION; SEMICONDUCTOR DEVICE STRUCTURES; SOLAR CELLS; SOLAR ENERGY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79251588044     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.201004512     Document Type: Letter

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