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Journal of Applied Physics

Volumn 108, Issue 10, 2010, Pages

Hot phonon-plasmon modes in GaN

(2) Dyson, A a Ridley, B K b

a UNIVERSITY OF HULL (United Kingdom)

b UNIVERSITY OF ESSEX (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CONCOMITANT REDUCTION; DIELECTRIC FUNCTIONS; DRIFT VELOCITIES; ELECTRON DENSITIES; ELECTRON DENSITY DEPENDENCE; HEAT DISSIPATION; HETEROSTRUCTURE FIELD EFFECT TRANSISTORS; HIGH ELECTRIC FIELDS; HIGH FIELD; HOT PHONONS; HOT-PHONON EFFECTS; LONGITUDINAL OPTICAL MODES; NONPARABOLIC CONDUCTION; ON-ELECTRON DENSITY; PHONON LIFETIMES; POWER DISSIPATION; RANDOM-PHASE;

CARRIER CONCENTRATION; DENSITY FUNCTIONAL THEORY; ELECTRIC FIELDS; ELECTRON DENSITY MEASUREMENT; ELECTRON MOBILITY; ELECTRONS; FIELD EFFECT TRANSISTORS; GALLIUM ALLOYS; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; PLASMONS;

PHONONS;

EID: 78650276985 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3500329 Document Type: Conference Paper

Times cited : (13)

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