Optical metrology of Ni and NiSi thin films used in the self-aligned silicidation process

Journal of Applied Physics

Volumn 107, Issue 9, 2010, Pages

  Kamineni, V K ^a   Raymond, M ^b   Bersch, E J ^a   Doris, B B ^c   Diebold, A C ^a  

^a STATE UNIVERSITY OF NEW YORK   (United States)

^b IBM MICROELECTRONICS   (United States)

^c IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BACK-SCATTERED; COMPLEMENTARY METHODS; COMPLEX DIELECTRIC FUNCTIONS; FREE ELECTRON; GRAIN SIZE; INTERBAND ABSORPTION; LOWER FREQUENCIES; METAL FILM; NICKEL MONOSILICIDE; NISI FILMS; OPTICAL METROLOGY; OPTICAL MODELS; REFLECTION COEFFICIENTS; SELF-ALIGNED; SILICIDATION; SILICIDATION PROCESS; X RAY REFLECTIVITY;

DIELECTRIC MATERIALS; ELECTRONS; GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; NICKEL; OPTICAL SYSTEMS; REFLECTION; RELAXATION PROCESSES; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY;

OPTICAL PROPERTIES;

EID: 79251489119     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3380665     Document Type: Article

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