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Volumn 25, Issue 6, 2008, Pages 2292-2295

Gas source MBE-grown metamorphic InGaAs photodetectors using InAlAs buffer and cap layers with cut-off wavelength up to 2.7 μm

(4) Tian, Zhao Bing a Gu, Yi a Wang, Kai a Zhang, Yong Gang a

a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ENERGY GAP; GAS SOURCE MOLECULAR BEAM EPITAXY; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; SEMICONDUCTING INDIUM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR ALLOYS;

BACK ILLUMINATION; CAP LAYERS; CUTOFF WAVELENGTHS; GAS-SOURCE MOLECULAR BEAM EPITAXY; INGAAS PHOTODETECTORS; INGAAS PHOTODIODES; PEAK DETECTIVITY; PERFORMANCE; WIDE-BAND-GAP;

PHOTODIODES;

EID: 46749088681 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/25/6/101 Document Type: Article

Times cited : (16)

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