Three-dimensional numerical simulation of phase-change memory cell with Probe like bottom electrode structure

Japanese Journal of Applied Physics

Volumn 48, Issue 2, 2009, Pages

  Liu, Yan ^a,b   Song, Zhitang ^a   Ling, Yun ^a   Gong, Yuefeng ^a,b   Feng, Songlin ^a  

^a SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POWER UTILIZATION; HEATING; PHASE CHANGE MEMORY; PROBES; PULSE CODE MODULATION; SYSTEM THEORY; THREE DIMENSIONAL;

BOTTOM CONTACTS; BOTTOM ELECTRODES; ELECTRIC-FIELD; HEATING EFFICIENCIES; HIGH CONCENTRATIONS; HIGH INTEGRATION DENSITIES; LOW-POWER CONSUMPTION; MOLTEN REGIONS; NEW DEVICES; PHASE-CHANGE MEMORIES; POWER CONSUMPTION; PROGRAMMING CURRENTS; THERMAL CHARACTERISTICS; THREE-DIMENSIONAL FINITE ELEMENT ANALYSIS; THREE-DIMENSIONAL NUMERICAL SIMULATIONS; THRESHOLD CURRENTS;

CELLS;

EID: 60849127600     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.48.024502     Document Type: Article

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