Comparative study of quasi-static and normal capacitance-voltage characteristics in amorphous Indium-Gallium-Zinc-Oxide thin film transistors

Solid-State Electronics

Volumn 56, Issue 1, 2011, Pages 95-99

  Lee, Sangwon ^a   Jeon, Yong Woo ^a   Kim, Sungchul ^a   Kong, Dongsik ^a   Kim, Dae Hwan ^a   Kim, Dong Myong ^a  

^a Kookmin University   (South Korea)

Author keywords

Amorphous; Capacitance Voltage characteristics; Density of states; InGaZnO; Optical illumination; Quasi static C V; Thin film transistors

Indexed keywords

AMORPHOUS; CAPACITANCE-VOLTAGE CHARACTERISTICS; DENSITY OF STATE; INGAZNO; OPTICAL ILLUMINATION; QUASI-STATIC;

AMORPHOUS FILMS; CAPACITANCE; GALLIUM; INDIUM; MODELS; THIN FILMS; ZINC;

THIN FILM TRANSISTORS;

EID: 78751645543     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2010.10.016     Document Type: Article

References (12)

1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono Nature 432 2004 488
2. J.K. Jeong, J.H. Jeong, J.H. Choi, J.S. Im, S.H. Kim, and H.W. Yang Int Symp Dig Tech -Soc Information Display 3 2008 1
3. J.-H. Lee, D.-H. Kim, D.-J. Yang, S.-Y. Hong, K.-S. Yoon, and P.-S. Hong Int Symp Dig Tech Papers -Soc Inform Display 42 2008 625
4. C.J. Kim, D. Kang, I. Song, J. Park, H. Lim, and S. Kim IEDM Tech Dig 11 2006 6
5. J.S. Choi, and G.W. Neudeck IEEE Trans Electron Device 39 1992 2515
6. S. Bindra, S. Haldar, and R.S. Gupta Solid-State Electron 48 2004 675
7. E. Lim, T. Manaka, R. Tamura, and M. Iwamoto Jpn J Appl Phys 45 2006 3712
8. K. Takechi, M. Nakata, H. Kanoh, S. Otsuki, and S. Kaneko Jpn J Appl Phys 45 2006 6905
9. K. Nomura, T. Kamiya, H. Yanagi, E. Ikenaga, K. Yang, and K. Kobayashi Appl Phys Lett 92 2008 202117
10. S. Lee, S. Park, S. Kim, Y. Jeon, K. Jeon, and J.-H. Park IEEE Electron Device Lett 31 2010 231
11. S. Lee, J.-H. Park, K. Jeon, S. Kim, Y. Jeon, and D.H. Kim Appl Phys Lett 96 2010 113506
12. I. Song, S. Kim, H. Yin, C.J. Kim, J. Park, and S. Kim IEEE Electron Device Lett 29 2008 549