-
2
-
-
1842854747
-
-
10.1149/1.1605271
-
D. Josell, D. Wheeler, C. Witt, and T. P. Moffat, Electrochem. Solid-State Lett., 6, C143 (2003). 10.1149/1.1605271
-
(2003)
Electrochem. Solid-State Lett.
, vol.6
, pp. 143
-
-
Josell, D.1
Wheeler, D.2
Witt, C.3
Moffat, T.P.4
-
3
-
-
0142121744
-
-
10.1063/1.1610256
-
M. W. Lane, C. E. Murray, F. R. McFeely, P. M. Vereecken, and R. Rosenberg, Appl. Phys. Lett., 83, 2330 (2003). 10.1063/1.1610256
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 2330
-
-
Lane, M.W.1
Murray, C.E.2
McFeely, F.R.3
Vereecken, P.M.4
Rosenberg, R.5
-
4
-
-
17044374035
-
5 nm ruthenium thin film as a directly plateable copper diffusion barrier
-
DOI 10.1063/1.1867560, 083104
-
T. N. Arunagiri, Y. Zhang, O. Chyan, M. El-Bouanani, M. J. Kim, K. H. Chen, C. T. Wu, and L. C. Chen, Appl. Phys. Lett., 86, 083104 (2005). 10.1063/1.1867560 (Pubitemid 40495298)
-
(2005)
Applied Physics Letters
, vol.86
, Issue.8
, pp. 1-3
-
-
Arunagiri, T.N.1
Zhang, Y.2
Chyan, O.3
El-Bouanani, M.4
Kim, M.J.5
Chen, K.H.6
Wu, C.T.7
Chen, L.C.8
-
5
-
-
69149109170
-
-
10.1149/1.3117242
-
W. Sari, T.-K. Eom, C.-W. Jeon, H. Sohn, and S.-H. Kim, Electrochem. Solid-State Lett., 12, H248 (2009). 10.1149/1.3117242
-
(2009)
Electrochem. Solid-State Lett.
, vol.12
, pp. 248
-
-
Sari, W.1
Eom, T.-K.2
Jeon, C.-W.3
Sohn, H.4
Kim, S.-H.5
-
7
-
-
0032689277
-
-
10.1149/1.1391785
-
S.-H. Kim, D.-S. Chung, K.-C. Park, K.-B. Kim, and S.-H. Min, J. Electrochem. Soc., 146, 1455 (1999). 10.1149/1.1391785
-
(1999)
J. Electrochem. Soc.
, vol.146
, pp. 1455
-
-
Kim, S.-H.1
Chung, D.-S.2
Park, K.-C.3
Kim, K.-B.4
Min, S.-H.5
-
8
-
-
31144433813
-
Comparative study of polycrystalline Ti, amorphous Ti, and multiamorphous Ti as a barrier film for Cu interconnect
-
DOI 10.1116/1.1852466
-
K.-L. Oh, M.-S. Yu, R.-Q. Hsu, and M.-H. Lin, J. Vac. Sci. Technol. B, 23, 229 (2005). 10.1116/1.1852466 (Pubitemid 43126559)
-
(2005)
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
, vol.23
, Issue.1
, pp. 229-235
-
-
Ou, K.-L.1
Yu, M.-S.2
Hsu, R.-Q.3
Lin, M.-H.4
-
9
-
-
59249104425
-
-
10.1016/j.tsf.2008.09.007
-
H. Kim, H.-B.-R. Lee, and W.-J. Maeng, Thin Solid Films, 517, 2563 (2009). 10.1016/j.tsf.2008.09.007
-
(2009)
Thin Solid Films
, vol.517
, pp. 2563
-
-
Kim, H.1
Lee, H.-B.-R.2
Maeng, W.-J.3
-
11
-
-
78751491874
-
-
last accessed Oct 26, 2010.
-
http://srdata.nist.gov/xps, last accessed Oct 26, 2010.
-
-
-
-
12
-
-
1842715159
-
-
10.1557/jmr.2004.19.2.523
-
Y. G. Shen, Z.-J. Liu, N. Jiang, H. S. Zhang, K. H. Chan, and Z. K. Xu, J. Mater. Res., 19, 523 (2004). 10.1557/jmr.2004.19.2.523
-
(2004)
J. Mater. Res.
, vol.19
, pp. 523
-
-
Shen, Y.G.1
Liu, Z.-J.2
Jiang, N.3
Zhang, H.S.4
Chan, K.H.5
Xu, Z.K.6
-
13
-
-
13744254886
-
The role of N in the resputtering inhibition of Si in W-Si-N reactively sputtered thin layer
-
DOI 10.1063/1.1840104, 034905
-
A. Vomiero, E. B. Marchi, G. Mariotto, G. Della Mea, A. Scandurra, and O. Puglisi, J. Appl. Phys., 97, 034905 (2005). 10.1063/1.1840104 (Pubitemid 40238063)
-
(2005)
Journal of Applied Physics
, vol.97
, Issue.3
, pp. 0349051-0349056
-
-
Vomiero, A.1
Marchi, E.B.2
Mariotto, G.3
Della Mea, G.4
Scandurra, A.5
Puglisi, O.6
-
14
-
-
33947140390
-
Morphology control of copper growth on TiN and TaN diffusion barriers in seedless copper electrodeposition
-
DOI 10.1149/1.2433703
-
S. Kim and D. J. Duquette, J. Electrochem. Soc., 154, D195 (2007). 10.1149/1.2433703 (Pubitemid 46398537)
-
(2007)
Journal of the Electrochemical Society
, vol.154
, Issue.4
-
-
Kim, S.1
Duquette, D.J.2
|