Effect of silicon addition on surface morphology and structural properties of titanium nitride films grown by reactive unbalanced direct current-magnetron sputtering

Journal of Materials Research

Volumn 19, Issue 2, 2004, Pages 523-534

  Shen, Y G ^a   Liu, Z J ^a   Jiang, N ^a   Zhang, H S ^a   Chan, K H ^a   Xu, Z K ^a  

^a CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ANNEALING; ATOMIC FORCE MICROSCOPY; COMPUTER SIMULATION; CRYSTAL MICROSTRUCTURE; ENERGY DISPERSIVE SPECTROSCOPY; FILM GROWTH; GRAIN BOUNDARIES; MAGNETRON SPUTTERING; MONTE CARLO METHODS; SILICON; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

REACTIVE UNBALANCED DIRECT CURRENT-MAGNETRON SPUTTERING; ROOT MEAN SQUARE (RMS); ROUGHENING KINETICS;

TITANIUM NITRIDE;

EID: 1842715159     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/jmr.2004.19.2.523     Document Type: Article

References (35)

1. S. Li, Y. Shi, and H. Peng, Plasma Chem. Plasma Process 12, 287 (1992).
2. S. Veprek, S. Reiprich, and L. Shizhi, Appl. Phys. Lett. 66, 2640 (1995).
3. S. Veprek and S. Reiprich, Thin Solid Films 268, 64 (1995).
4. E.A. Lee and K.H. Kirn, Thin Solid Films 420-421, 371 (2002).
5. M. Diserens, J. Patscheider, and F. Levy, Surf. Coat. Technol. 120-121, 158 (1999).
6. W.H. Lee, S.K. Park, B.J. Kang, P.J. Reucroft, and J.G. Lee, J. Electron. Mater. 30, 84 (2001).
7. L. Rebouta, C.J. Tavares, R. Aimo, Z. Wang, K. Pischow, E. Alves, T.C. Rojas, and J.A. Odriozola, Surf. Coat. Technol. 133-134, 234 (2000).
8. M. Diserens, J. Patscheider, and F. Levy, Surf. Coat. Technol. 108-109, 241 (1998).
9. J.F. Moulder, W.F. Stichle, P.E. Sobol, and K.D. Bomben, Handbook of X-Ray Photoelectron Spectroscopy, edited by J. Chastain and R.C. King, Jr. (Physical Electronics, Eden Prairie, MN, 1995).
10. W.C. Oliver and G.M. Pharr, J. Mater. Res. 7, 1564 (1992).
11. P.W. Shum, Z.F. Zhou, K.Y. Li, and Y.G. Shen, Mater. Sci. Eng. B 100, 199 (2003).
12. I. Bertóti, M. Mohai, J.L. Sullivan, and S.O, Saied, Appl. Surf. Sci. 84, 357 (1995).
13. X.P. Hu, Z.G. Han, G.Y. Li, and M.Y. Gu, J. Vac. Sci. Technol, A 20, 1921 (2002).
14. S.H. Kim, J.K. Kim, and K.H, Kim, Thin Solid Films 420, 360 (2002).
15. H.P. Klug and L.E. Alexander, X-ray Diffraction Procedures for Polycrystalline and Amorphous Materials (Wiley, New York, 1954),
16. D.J. Srolovitz, J. Vac. Sci. Technol. A 4, 2925 (1986).
17. D.J. Srolovitz, A. Mazor, and E.G. Bukiet, J. Vac. Sci. Technol. A 6, 2371 (1988),
18. N. Metropolis, A.W. Rosenbluth, M.N. Rosenbluth, A.T. Teller, and E. Teller, J. Chem. Phys. 21, 1087 (1953).
19. T. Halpin-Healy and Y-C. Zhang, Phys. Rep. 254, 215 (1995).
20. M. Ziegert and M. Plischke, Phys. Rev. Lett. 73, 1517 (1994).
21. Z.W. Lai and S.D. Sarma, Phys. Rev. Lett. 66, 2348 (1991).
22. Z-J. Liu, N. Jiang, Y.G. Shen, and Y-W. Mai, J. Appl. Phys. 92, 3559 (2002).
23. J. Pelleg, L.Z. Zevin, and S. Lungo, Thin Solid Films 197, 117 (1991).
24. T. Nakajima, K. Watanabe, and N. Watanabe, J. Electrochem. Soc. 134, 3175 (1987).
25. C.R. Brundle, J. Vac. Sci. Technol. 13, 301 (1976).
26. CRC Handbook of Chemistry and Physics, 72nd ed., edited by D.R. Lide (CRC Press, Boca Raton, FL, 1991/1992).
27. S. Veprek, J. Vac. Sci. Technol. A 17, 2401 (1999).
28. J. Musil, Surf. Coat. Technol. 125, 322 (2000).
29. B.Q. Li, I. Kojima, and J.M. Zuo, J. Appl. Phys. 91, 4082 (2002).
30. G. Palasantzas, Phys. Rev. B 48, 14472 (1993).
31. S.K. Sinha, E.B. Sirota, S. Garoff, and H.B. Stanley, Phys. Rev. B 38, 2297 (1988).
32. Y.G. Shen, Y-W. Mai, D.R. McKenzie, Q.C. Zhang, W.D. McFall, and W.E. McBride, J. Appl. Phys. 88, 1380 (2000).
33. Y.G. Shen, Y-W. Mai, Q.C. Zhang, D.R. McKenzie, W.D. McFall, and W.E. McBride, J. Appl. Phys. 87, 177 (2000).
34. Y.G. Shen, J. Yao, D.J. O'Connor, B.V. King, and R.J. MacDonald, Phys. Rev. B 56, 9894 (1997).
35. Y.G. Shen and Y-W. Mai, J. Mater. Res. 15, 2437 (2000).