Analysis and design of carbon nanotube based field effect transistors for nano infrared sensors

2010 IEEE Nanotechnology Materials and Devices Conference, NMDC2010

Volumn , Issue , 2010, Pages 164-168

  Chen, Hongzhi ^a   Xi, Ning ^a   Lai, King W C ^a   Fung, Carmen K M ^a   Chen, Liangliang ^a   Lou, Jianyong ^a  

^a Michigan State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS AND DESIGN; CARBON NANOTUBE FIELD-EFFECT TRANSISTORS; CARBON-NANOTUBE-BASED FIELD-EFFECT TRANSISTORS; CNT FETS; DETECTION MECHANISM; DOPING LEVELS; ENERGY BAND; GATE STRUCTURE; INFRARED SENSOR; IR SENSOR; IR SOURCE; NANOTUBE CHANNELS; OPTIMIZED DESIGNS; PHOTOCURRENT RESPONSE; PHOTORESPONSES; PHOTOVOLTAIC CHARACTERISTICS; POLARIZATION ANISOTROPY; SENSOR DESIGNS; SINGLE GATES;

CARBON NANOTUBES; DESIGN; ELECTRON MULTIPLIERS; INFRARED DETECTORS; NANOTECHNOLOGY; OPTICAL SENSORS; PHOTOCURRENTS; POLARIZATION;

FIELD EFFECT TRANSISTORS;

EID: 78651484428     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/NMDC.2010.5652169     Document Type: Conference Paper

References (27)

1. I. Kanno, S. Hishiki, O. Sugiura, R. Xiang, T. Nakamura, and M. Katagiri, "Photon detection by a cryogenic InSb detector," Review of Scientific Instruments, vol. 76, no. 2, 2005.
2. M. Almasri, B. Xu, and J. Castracane, "Amorphous silicon two-color microbolometer for uncooled ir detection," Sensors Journal, IEEE, vol. 6, no. 2, pp. 293-300, 2006.
3. P. Avouris, M. Freitag, and V. Perebeinos, "Carbon-nanotube photonics and optoelectronics," Nature Phtonics, vol. 2, no. 6, pp. 341-350, 2008.
4. A. Phaedon, "Carbon nanotube electronics," Chem. Phys., vol. 281, pp. 429-445, 2002.
5. C. K. M. Fung, N. Xi, B. Shanker, and K. W. C. Lai, "Nanoresonant signal boosters for carbon nanotube based infrared detectors," Nanotechnology, vol. 20, no. 18, 2009.
6. N. M. Gabor, Z. Zhong, K. Bosnick, J. Park, and P. L. McEuen, "Extremely Efficient Multiple Electron-Hole Pair Generation in Carbon Nanotube Photodiodes," Science, vol. 325, no. 5946, pp. 1367-1371, 2009.
7. S. Sanguinetti, M. Guzzi, E. Grilli, M. Gurioli, L. Seravalli, P. Frigeri, S. Franchi, M. Capizzi, S. Mazzuccato, and A. Polimeni, "Effective phonon bottleneck in the carrier thermalization of InAs/GaAs quantum dots," Physical Review B, vol. 78, no. 8, 2008.
8. C. A. Soci, A. A. Zhang, B. A. Xiang, S. A. A. Dayeh, D. P. R. A. Aplin, J. A. Park, X. Y. A. Bao, Y. H. A. Lo, and D. Y. Wang, "Zno nanowire uv photodetectors with high internal gain," Nano Letters, vol. 7, pp. 1003-1009, 2007.
9. K. W. C. Lai, N. Xi, C. K. M. Fung, H. Chen, and T.-J. Tarn, "Engineering the band gap of carbon nanotube for infrared sensors," Applied Physics Letters, vol. 95, no. 22, p. 221107, 2009.
10. I. A. Levitsky and W. B. Euler, "Photoconductivity of single-wall carbon nanotubes under continuous-wave near-infrared illumination," Appl. Phys. Lett., vol. 83, pp. 1857-1859, 2003.
11. A. Fujiwara, Y. Matsuoka, H. Suematsu, N. Ogawa, K. Miyano, H. Kataura, Y. Maniwa, S. Suzuki, and Y. Achiba, "Photoconductivity in semiconducting single-walled carbon nanotubes," Japanese Journal of Applied Physics, vol. 40, no. Part 2, No. 11B, pp. L1229-L1231, 2001. (Pubitemid 34090190)
12. J. U. Lee, "Photovoltaic effect in ideal carbon nanotube diodes," Appl. Phys. Lett., vol. 87, p. 073101, 2005.
13. J. Zhang, N. Xi, H. Chen, K. W. C. Lai, G. Li, and U. Wejinya, "Photovoltaic effect in single carbon nanotube-based schottky diodes," International Journal of Nanoparticles, vol. 1, no. 2, pp. 108-118, 2008.
14. X. Qiu, M. Freitag, V. Perebeinos, and P. Avouris, " Photoconductivity spectra of single-carbon nanotubes: Implications on the nature of their excited states," Nano Letters, vol. 5, pp. 749-752, 2005.
15. R. Martel, V. Derycke, C. Lavoie, J. Appenzeller, K. K. Chan, J. Tersoff, and P. Avouris, "Ambipolar electrical transport in semiconducting singlewall carbon nanotubes," Phys. Rev. Lett., vol. 87, no. 25, p. 256805, Dec 2001.
16. S. Heinze, J. Tersoff, and P. Avouris, "Electrostatic engineering of nanotube transistors for improved performance," Applied Physics Letters, vol. 83, no. 24, pp. 5038-5040, 2003.
17. Y.-M. Lin, J. Appenzeller, and P. Avouris, "Ambipolar-to-unipolar conversion of carbon nanotube transistors by gate structure engineering," Nano Letters, vol. 4, pp. 947-950, 2004.
18. W.-Y. Lee, C.-C. Lin, K.-S. Chang-Liao, K.-C. Leou, and C.-H. Tsai, "Electrical characteristics of cnfets with asymmetric gating structures," Diamond and Related Materials, vol. 17, no. 2, pp. 154 - 157, 2008.
19. M. Pourfath, A. Gehring, E. Ungersboeck, H. Kosina, S. Selberherr, B. H. Cheong, and W. J. Park, "Separated carrier injection control in carbon nanotube ?eld-effect transistors," Journal of Applied Physics, vol. 97, no. 10, p. 106103, 2005.
20. J. U. Lee, P. P. Gipp, and C. M. Heller, "Carbon nanotube p-n junction diodes," Applied Physics Letters, vol. 85, no. 1, pp. 145-147, 2004.
21. F. M. C. Léonard and J. Tersoff, "Novel length scales in nanotube devices," Phys. Rev. Lett., vol. 83, no. 24, pp. 5174-5177, 1999.
22. J. Zhao, J. Han, and J. P. Lu, "Work functions of pristine and alkalimetal intercalated carbon nanotubes and bundles," Phys. Rev. B, vol. 65, no. 19, p. 193401, 2002.
23. R. Gao, Z. Pan, and Z. L. Wang, "Work function at the tips of multiwalled carbon nanotubes," Applied Physics Letters, vol. 78, no. 12, pp. 1757-1759, 2001. (Pubitemid 33598294)
24. C. Chen, W. Zhang, E. S.-W. Kong, and Y. Zhang, "Carbon nanotube photovoltaic device with asymmetrical contacts," Applied Physics Letters, vol. 94, no. 26, p. 263501, 2009.
25. K. W. C. Lai, N. Xi, and U. C. Wejinya, "Automated process for selection of carbon nanotube by electronic property using dielectrophoretic manipulation," Journal of Micro - Nano Mechatronics, vol. 4, no. 1-2, pp. 37-48, 2008.
26. J. Zhang, N. Xi, L. Liu, H. Chen, K. Lai, and G. Li, "Atomic force yields a master nanomanipulator," Nanotechnology Magazine, IEEE, vol. 2, no. 2, pp. 13 -17, june 2008.
27. J. Wang, M. Gudiksen, X. Duan, Y. Cui, and C. Lieber, "Highly polarized photoluminescence and photodetection from single indium phosphide nanowires," Science, vol. 293, no. 5534, pp. 1455-1457, 2001.