Accuracy of the Frensley inflow boundary condition for Wigner equations in simulating resonant tunneling diodes

Journal of Computational Physics

Volumn 230, Issue 5, 2011, Pages 2031-2044

  Jiang, Haiyan ^a,b   Cai, Wei ^b   Tsu, Raphael ^c  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

^b UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE   (United States)

^c University of North Carolina at Charlotte   (United States)

Author keywords

Frensley inflow boundary condition; Resonant tunneling diode; Wigner function

Indexed keywords

BOUNDARY CONDITIONS; GALLIUM ARSENIDE; III-V SEMICONDUCTORS; RESONANT TUNNELING;

ACTIVE DEVICES; BIAS POTENTIAL; DIRICHLET-TO-NEUMANN; FRENSLEY INFLOW BOUNDARY CONDITION; INFLOW BOUNDARY CONDITIONS; LOW BIAS; NONEQUILIBRIUM GREENS FUNCTION (NEGF); RESONANT-TUNNELING DIODES; WIGNER EQUATIONS; WIGNER FUNCTIONS;

RESONANT TUNNELING DIODES;

EID: 78651430457     PISSN: 00219991     EISSN: 10902716     Source Type: Journal    
DOI: 10.1016/j.jcp.2010.12.002     Document Type: Article

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