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Current Applied Physics

Volumn 10, Issue 2 SUPPL., 2010, Pages

Electrical, structural and etching characteristics of ZnO:Al films prepared by rf magnetron

(6) Kim, Yong Hyun a,b Lee, Kyung Seok a Lee, Taek Sung a Cheong, Byung ki a Seong, Tae Yeon b Kim, Won Mok a

a Korea Institute of Science and Technology (South Korea)

b Korea University (South Korea)

Author keywords

Al doped ZnO; Etching; Magnetron sputtering; Transparent conducting oxide

Indexed keywords

AL DOPED ZNO; AR GAS PRESSURE; AZO FILMS; CRATER FORMATION; CRYSTALLINITIES; ELECTRICAL AND STRUCTURAL PROPERTIES; ELECTRICAL PROPERTY; ETCHING BEHAVIOR; ETCHING CHARACTERISTICS; ETCHING RATE; HCL SOLUTION; HIGH TEMPERATURE; PEAK INTENSITY; RADIO FREQUENCY MAGNETRON SPUTTERING; RF MAGNETRONS; RF-POWER; STRUCTURED FILMS; SUBSTANTIAL VARIATIONS; SUBSTRATE TEMPERATURE; TRANSPARENT CONDUCTING OXIDE; WORKING PRESSURES; ZNO; ZNO:AL FILMS;

ALUMINUM; ELECTRIC PROPERTIES; ETCHING; FILM PREPARATION; HYDROCHLORIC ACID; MAGNETRON SPUTTERING; MAGNETRONS; OPTICAL FILMS; ORGANIC POLYMERS; PRESSURE EFFECTS; ZINC OXIDE;

STRUCTURAL PROPERTIES;

EID: 77949570321 PISSN: 15671739 EISSN: None Source Type: Journal
DOI: 10.1016/j.cap.2009.11.061 Document Type: Article

Times cited : (21)

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