Comparison of ZnO thin films grown on a polycrystalline 3C-SiC buffer layer by RF magnetron sputtering and a sol-gel method

Applied Surface Science

Volumn 257, Issue 8, 2011, Pages 3285-3290

  Phan, Duy Thach ^a   Chung, Gwiy Sang ^a  

^a University of Ulsan   (South Korea)

Author keywords

3C SiC buffer layer; RF sputtering; Sol gel; ZnO

Indexed keywords

BUFFER LAYERS; FILM PREPARATION; II-VI SEMICONDUCTORS; LATTICE MISMATCH; MAGNETRON SPUTTERING; METALLIC FILMS; NANOCRYSTALS; OPTICAL FILMS; OXIDE FILMS; PIEZOELECTRICITY; SILICON CARBIDE; SOL-GEL PROCESS; SOL-GELS; THIN FILMS; ZINC OXIDE;

DEPOSITION TECHNIQUE; PIEZOELECTRIC PROPERTY; PIEZOELECTRIC THIN FILMS; POLYCRYSTALLINE 3C-SIC; POST DEPOSITION ANNEALING; RF-MAGNETRON SPUTTERING; RF-SPUTTERING; SIC BUFFER LAYERS;

SILICON COMPOUNDS;

EID: 78651349042     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2010.11.003     Document Type: Article

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