Growth of a high quality ZnO film on sapphire by atmospheric pressure halide vapor phase epitaxy using ZnO buffer layers

Journal of Materials Chemistry

Volumn 10, Issue 4, 2000, Pages 969-972

  Kaiya, Kazuhiko ^a   Omichi, Kouji ^a   Takahashi, Naoyuki ^a   Nakamura, Takato ^a   Okamoto, Shinji ^b,c   Yamamoto, Hajime ^c  

^a SHIZUOKA UNIVERSITY   (Japan)

^b TOTTORI UNIVERSITY   (Japan)

^c TOKYO UNIVERSITY OF TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ZINC OXIDE;

ARTICLE; CRYSTAL; ELECTRON DIFFRACTION; LIGHT; LUMINESCENCE; X RAY DIFFRACTION;

EID: 0034075719     PISSN: 09599428     EISSN: None     Source Type: Journal    
DOI: 10.1039/a909584e     Document Type: Article

References (10)

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