Ultrasmooth growth of amorphous silicon films through ion-induced long-range surface correlations

Applied Physics Letters

Volumn 98, Issue 1, 2011, Pages

  Redondo Cubero, A ^a,b   Gago, R ^a   Vazquez L ^a  

^a INSTITUTO DE CIENCIA DE MATERIALES DE MADRID   (Spain)

^b UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON FILM; GROWTH TIME; MASS-TRANSPORT PROCESS; NEGATIVE VOLTAGE; SHADOWING EFFECTS; SUBSTRATE BIASING; SURFACE HEIGHT; ULTRASMOOTHNESS; UNBIASED CONDITIONS;

AMORPHOUS SILICON; FILM GROWTH; METALLIC FILMS;

AMORPHOUS FILMS;

EID: 78651286154     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3535612     Document Type: Article

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