Field-effect transistors with thin ZnO as active layer for gas sensor applications

Microelectronic Engineering

Volumn 85, Issue 5-6, 2008, Pages 1035-1038

  Farmakis, F V ^a   Speliotis, Th ^b   Alexandrou, K P ^a   Tsamis, C ^a   Kompitsas, M ^c   Fasaki, I ^c   Jedrasik, P ^d   Petersson, G ^d   Nilsson, B ^d  

^a INSTITUTE OF MICROELECTRONICS   (Greece)

^b INSTITUTE OF MATERIALS SCIENCE   (Greece)

^c THEORETICAL AND PHYSICAL CHEMISTRY INSTITUTE   (Greece)

^d CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Bottom gate FETs; Gas sensor; Pulsed laser deposition; Zinc oxide

Indexed keywords

BIOSENSORS; POLYCRYSTALLINE MATERIALS; PULSED LASER DEPOSITION; ZINC OXIDE;

GAS SENSING MEASUREMENTS; NANOSCALE GRAIN SIZE;

FIELD EFFECT TRANSISTORS;

EID: 44349174289     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2008.01.040     Document Type: Article

References (12)

1. Pearton S.J., et al. J. Vac. Sci. Technol. B 22 (2004) 932
2. Xu J., Pan Q., Shun Y., and Tian Z. Sensor. Actuat. B 66 (2000) 277
3. Ma Y., Wang W.L., Liao K.J., and Kong C.Y. J. Wide Bandgap Mater. 10 (2002) 113
4. Mar G.L., Timbrell P.Y., and Lamb R.N. Thin Solid Film 223 (1993) 341
5. Yamazaki O., Mitsuyu T., and Wasa K. IEEE Trans. Sonic. Ultrason. 27 (1980) 369
6. de Klerk J. Ultrasonics 8 (1970) 159
7. Yamamoto T., Shiosaki T., and Kawabata A. J. Appl. Phys. 51 (1980) 3113
8. Ghosh S., Sarkar A., Bhattacharya S., Chaudhuri S., and Pal A.K. J. Cryst. Growth 108 (1991) 534
9. Ianno N.J., McCnville L., Shaikh N., Pittal S., and Snyder P.G. Thin Solid Film 220 (1992) 92
10. Puchert M.K., Timbrell P.Y., and Lamb R.N. J. Vac. Sci. Technol. A 14 (1996) 2220
11. Wenckstern H.V., Biehne G., Rahman R.A., Hochmuth H., Lorentz M., and Grundmann M. Appl. Phys. Lett. 88 (2006) 092102
12. Boccuzzi F., Guglielminotti E., and Chiorino A. Sensor. Actuat. 7 (1992) 645