Semi-transparent pentacene thin film transistors with NiOx electrode operating at low voltages

Thin Solid Films

Volumn 516, Issue 7, 2008, Pages 1541-1543

  Hwang, D K ^a   Choi, Jeong M ^a   Lee, Kimoon ^a   Park, Ji Hoon ^b   Kim, Eugene ^b   Im, Seongil ^a  

^a Yonsei University   (South Korea)

^b Hong Ik University   (South Korea)

Author keywords

Double gate dielectric; Pentacene thin film transistors; Semi transparent NiOx

Indexed keywords

ELECTRODES; GATE DIELECTRICS; SHEET RESISTANCE; THIN FILMS; TRANSISTORS;

DOUBLE GATE DIELECTRICS; FIELD MOBILITY; PENTACENE THIN FILM TRANSISTORS; SATURATION MOBILITY;

NICKEL OXIDE;

EID: 38649138368     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.03.164     Document Type: Article

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