Electrical characterization of RF TSV for 3D multiCore and heterogeneous ICs

IEEE/ACM International Conference on Computer-Aided Design, Digest of Technical Papers, ICCAD

Volumn , Issue , 2010, Pages 686-693

  Yu, Le ^a   Yang, Haigang ^a   Jing, Tom T ^b   Xu, Min ^b   Geer, Robert ^b   Wang, Wei ^b  

^a INSTITUTE OF ELECTRONICS   (China)

^b STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

3D; Heterogeneous 3d IC; Interconnections; Multi core; RF; TSVs

Indexed keywords

COMPUTER AIDED DESIGN; ELECTRONICS PACKAGING; TIMING CIRCUITS;

ELECTRICAL CHARACTERIZATION; INTERCONNECTIONS; MULTI CORE; ORDERS OF MAGNITUDE; SIGNAL DEGRADATION; THREEDIMENSIONAL (3-D); THROUGH-SILICON-VIA (TSV); TSVS;

THREE DIMENSIONAL INTEGRATED CIRCUITS;

EID: 78650891924     PISSN: 10923152     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICCAD.2010.5654244     Document Type: Conference Paper

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