Drastic reduction in surface recombination velocity of crystalline silicon by surface treatment using catalytically-generated radicals

Solar Energy Materials and Solar Cells

Volumn 95, Issue 2, 2011, Pages 797-799

  Matsumura, Hideki ^a   Miyamoto, Motoharu ^a   Koyama, Koichi ^a   Ohdaira, Keisuke ^a  

^a JAPAN ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY   (Japan)

Author keywords

Cat CVD; Hot wire CVD; Solar cells; Surface recombination velocity

Indexed keywords

AMORPHOUS SI; ATOMIC HYDROGEN TREATMENT; CAT-CVD; CATALYTIC REACTIONS; CRYSTALLINE SILICONS; DOPING IMPURITIES; HEATED CATALYZER; HOT WIRE CVD; HYDROGEN ATOMS; HYDROGEN GAS; SI SURFACES; SI WAFER; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATION VELOCITY;

AMORPHOUS FILMS; AMORPHOUS SILICON; CATALYSIS; CRYSTALLINE MATERIALS; HYDROGEN; SEMICONDUCTING SILICON COMPOUNDS; SOLAR CELLS; SURFACE TREATMENT; VELOCITY; WIRE;

SILICON WAFERS;

EID: 78650681133     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2010.08.034     Document Type: Article

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