Surface plasmon enhanced UV emission in AlGaN/GaN quantum well

Applied Physics Letters

Volumn 97, Issue 22, 2010, Pages

  Lin, J ^a   Mohammadizia, A ^a   Neogi, A ^a   Morkoc, H ^b   Ohtsu, M ^c  

^a UNIVERSITY OF NORTH TEXAS   (United States)

^b Virginia Commonwealth University   (United States)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ALUMINUM CONCENTRATION; EPITAXIAL SUBSTRATES; METAL THIN FILM; PHOTOLUMINESCENCE LIFETIME; PL INTENSITY; PURCELL FACTOR; QUANTUM WELL; RESONANT ENHANCEMENTS; SURFACE PLASMONS; UV EMISSIONS; UV WAVELENGTH RANGES;

EPITAXIAL GROWTH; GALLIUM; GALLIUM NITRIDE; LIGHT EMISSION; PLASMONS; SPECTROSCOPIC ELLIPSOMETRY;

SEMICONDUCTOR QUANTUM WELLS;

EID: 78650665029     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3515419     Document Type: Article

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