High-power MIXSEL: An integrated ultrafast semiconductor laser with 6.4 W average power

Optics Express

Volumn 18, Issue 26, 2010, Pages 27582-27588

  Rudin, B ^a   Wittwer, V J ^a   Maas, D J H C ^a   Hoffmann, M ^a   Sieber, O D ^a   Barbarin, Y ^a   Golling, M ^a   Sudmeyer T ^a   Keller, U ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

CHIP SCALE PACKAGES; FIBER LASERS; LASERS; OPTICALLY PUMPED LASERS; PULSE REPETITION RATE; PUMPING (LASER); SEMICONDUCTOR QUANTUM WELLS; SILICON WAFERS; SURFACE EMITTING LASERS; ULTRAFAST LASERS; ULTRASHORT PULSES;

ANTIRESONANT; AVERAGE POWER; CAVITY SURFACE-EMITTING LASERS; CVD-DIAMOND; FS PULSE; HEAT SPREADERS; HIGH-POWER; INTRACAVITY ELEMENTS; MANUFACTURING COST; MASS PRODUCTION; MODE-LOCKED; MODE-LOCKED SEMICONDUCTOR LASERS; OUTPUT POWER; PASSIVE MODE LOCKING; POWER APPLICATIONS; POWER-SCALING; PULSE FORMATION; QUANTUM DOT; REPETITION RATE; SATURABLE ABSORBERS; SCIENTIFIC APPLICATIONS; SEMICONDUCTOR SATURABLE ABSORBER MIRRORS; SINGLE WAFER; STRAIGHT CAVITY; STRUCTURE DESIGN; THERMAL MANAGEMENT; TRANSVERSE MODE; TWO-COMPONENT; ULTRA-FAST; VERTICAL EXTERNAL CAVITY SURFACE EMITTING LASER;

SEMICONDUCTOR LASERS;

QUANTUM DOT;

ARTICLE; DIODE LASER; EQUIPMENT; EQUIPMENT DESIGN; SYSTEM ANALYSIS;

EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; LASERS, SEMICONDUCTOR; QUANTUM DOTS; SYSTEMS INTEGRATION;

EID: 78650573363     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.18.027582     Document Type: Article

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