Structural and electrical properties of high-k HoTiO3 gate dielectrics

ECS Transactions

Volumn 28, Issue 1, 2010, Pages 241-245

  Pan, Tung Ming ^a   Yen, Li Chen ^b   Hu, Chia Wei ^a   Chao, Tien Sheng ^b  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; DIELECTRIC MATERIALS; GATE DIELECTRICS; HOLMIUM COMPOUNDS; INTERFACE STATES; LEAKAGE CURRENTS; TITANIUM COMPOUNDS;

CAPACITANCE VALUES; DENSITY OF INTERFACE STATE; HYSTERESIS VOLTAGE; INTRINSIC DEFECTS; LOW-LEAKAGE CURRENT; REACTIVE CO-SPUTTERING; SI(1 0 0); STRUCTURAL AND ELECTRICAL PROPERTIES;

HIGH-K DIELECTRIC;

EID: 78650545028     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.3375607     Document Type: Conference Paper

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