Behavior of the 1/f noise and electron mobility in 65 nm FD SOI nMOSFETs employing different tensile-strain-inducing techniques

AIP Conference Proceedings

Volumn 922, Issue , 2007, Pages 39-42

  Lukyanchikova, N ^a   Garbar, N ^a   Kudina, V ^a   Smolanka, A ^a   Simoen, E ^b   Claeys, C ^b,c  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

1 f noise; Contact Etch Stop Layer; electron mobility; Nyquist noise; Strained Si Directly On Insulator; tensile strained nMOSFET

Indexed keywords

EID: 78650543866     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2759632     Document Type: Conference Paper

References (5)

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