-
1
-
-
0033335620
-
Simulation technologies for cosmic ray neutron-induced soft errors: Models and simulation systems
-
Jun.
-
Y. Tosaka, H. Kanata, T. Itakura, and S. Satoh, "Simulation technologies for cosmic ray neutron-induced soft errors: Models and simulation systems," IEEE Trans. Nucl. Sci., vol. 46, no. 3, pp. 774-780, Jun. 1999.
-
(1999)
IEEE Trans. Nucl. Sci.
, vol.46
, Issue.3
, pp. 774-780
-
-
Tosaka, Y.1
Kanata, H.2
Itakura, T.3
Satoh, S.4
-
2
-
-
11044232002
-
SEMM2: A modelling system for single event analysis
-
H. H. K. Tang and E. H. Cannon, "SEMM2: A modelling system for single event analysis," IEEE Trans. Nucl. Sci., vol. 51, no. 6, 2004.
-
(2004)
IEEE Trans. Nucl. Sci.
, vol.51
, Issue.6
-
-
Tang, H.H.K.1
Cannon, E.H.2
-
3
-
-
34548071611
-
Application of RADSAFE to model single event upset response of a 0.25 m CMOS SRAM
-
Aug.
-
K. M. Warren et al., "Application of RADSAFE to model single event upset response of a 0.25 m CMOS SRAM," IEEE Trans. Nucl. Sci., vol. 54, no. 4, pp. 898-903, Aug. 2007.
-
(2007)
IEEE Trans. Nucl. Sci.
, vol.54
, Issue.4
, pp. 898-903
-
-
Warren, K.M.1
-
4
-
-
37249067108
-
Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch
-
Dec.
-
K. M. Warren, B. D. Sierawski, R. A. Reed, R. A. Weller, C. Carmichael, A. Lesea, M. H. Mendenhall, P. E. Dodd, R. D. Schrimpf, L. W. Massengill, T. Hoang, H. Wan, J. L. De Jong, R. Padovani, and J. J. Fabula, "Monte-Carlo based on-orbit single event upset rate prediction for a radiation hardened by design latch," IEEE Trans. Nucl. Sci., vol. 54, no. 6, pp. 2419-2425, Dec. 2007.
-
(2007)
IEEE Trans. Nucl. Sci.
, vol.54
, Issue.6
, pp. 2419-2425
-
-
Warren, K.M.1
Sierawski, B.D.2
Reed, R.A.3
Weller, R.A.4
Carmichael, C.5
Lesea, A.6
Mendenhall, M.H.7
Dodd, P.E.8
Schrimpf, R.D.9
Massengill, L.W.10
Hoang, T.11
Wan, H.12
De Jong, J.L.13
Padovani, R.14
Fabula, J.J.15
-
5
-
-
72349092376
-
Operational ser calculations on the SAC-C orbit using the multiscales single event phenomena predictive platform (MUSCA SEP3)
-
G. Hubert, S. Duzellier, C. Inguimbert, C. Boattela-polo, F. Bezzera, and R. Ecoffet, "Operational SER calculations on the SAC-C orbit using the multiscales single event phenomena predictive platform (MUSCA SEP3)," IEEE Trans. Nucl. Sci., vol. 56, no. 6, pp. 3032-3042, 2009.
-
(2009)
IEEE Trans. Nucl. Sci.
, vol.56
, Issue.6
, pp. 3032-3042
-
-
Hubert, G.1
Duzellier, S.2
Inguimbert, C.3
Boattela-Polo, C.4
Bezzera, F.5
Ecoffet, R.6
-
6
-
-
72349087819
-
Real-life SEU experiments on 90 nm SRAMs in Atmospheric Environment: Measures vs. predictions done by means of MUSCA SEP3 platform
-
Dec.
-
R. Velazco, P. Peronnard, and G. Hubert, "Real-life SEU experiments on 90 nm SRAMs in Atmospheric Environment: Measures vs. predictions done by means of MUSCA SEP3 platform," IEEE Trans. Nucl. Sci., vol. 56, no. 6, pp. 3450-3455, Dec. 2009.
-
(2009)
IEEE Trans. Nucl. Sci.
, vol.56
, Issue.6
, pp. 3450-3455
-
-
Velazco, R.1
Peronnard, P.2
Hubert, G.3
-
7
-
-
0036947691
-
In-flight observations of the radiation environment and its effects on devices in the SAC-C polar orbit
-
Dec.
-
D. Falguere, D. Boscher, T. Nuns, S. Duzellier, S. Bourdarie, R. Ecoffet, S. Barde, J. Cueto, C. Alonzo, and C. Hoffman, "In-flight observations of the radiation environment and its effects on devices in the SAC-C polar orbit," IEEE Trans. Nucl. Sci., vol. 49, no. 6, pp. 2782-2887, Dec. 2002.
-
(2002)
IEEE Trans. Nucl. Sci.
, vol.49
, Issue.6
, pp. 2782-2887
-
-
Falguere, D.1
Boscher, D.2
Nuns, T.3
Duzellier, S.4
Bourdarie, S.5
Ecoffet, R.6
Barde, S.7
Cueto, J.8
Alonzo, C.9
Hoffman, C.10
-
8
-
-
77955786603
-
ICARE on-board SAC-C: More than 8 years of SEU & MBU, analysis and prediction
-
Aug., accepted for publication
-
C. Boatella, G. Hubert, R. Ecoffet, and S. Duzellier, "ICARE on-board SAC-C: More than 8 years of SEU & MBU, analysis and prediction," IEEE Trans. Nucl. Sci., no. 4, Aug. 2010, accepted for publication.
-
(2010)
IEEE Trans. Nucl. Sci.
, Issue.4
-
-
Boatella, C.1
Hubert, G.2
Ecoffet, R.3
Duzellier, S.4
-
9
-
-
78650420192
-
-
[online]
-
[online]. Available: http://www.ngdc.noaa.gov/stp/satellite/goes/ index.html
-
-
-
-
11
-
-
84937079881
-
Heavy ions test results on memories
-
R. Ecoffet, M. Labrunee, S. Duzellier, and D. Falguere, "Heavy ions test results on memories," in Proc. IEE Radiat. Effects Data Workshop Rec., 1992, p. 27.
-
(1992)
Proc. IEE Radiat. Effects Data Workshop Rec.
, pp. 27
-
-
Ecoffet, R.1
Labrunee, M.2
Duzellier, S.3
Falguere, D.4
-
12
-
-
84962180292
-
Heavy ion/proton test results on high integrated memories
-
S. Duzellier, D. FaIguere, and R. Ecoffet, "Heavy ion/proton test results on high integrated memories," in Proc. IEE Radiat. Effects Data Workshop Rec., 1993, p. 36.
-
(1993)
Proc. IEE Radiat. Effects Data Workshop Rec.
, pp. 36
-
-
Duzellier, S.1
Faiguere, D.2
Ecoffet, R.3
-
13
-
-
0001671884
-
Rate prediction for single-event effects-A critique
-
Dec.
-
E. L. Petersen et al., "Rate prediction for single-event effects-A critique," IEEE Trans. Nucl. Sci., vol. 39, no. 6, pp. 1577-1599, Dec. 1992.
-
(1992)
IEEE Trans. Nucl. Sci.
, vol.39
, Issue.6
, pp. 1577-1599
-
-
Petersen, E.L.1
-
14
-
-
58849117603
-
Low energy proton single-event-upset test results on 65 nm SOI SRAM
-
Dec.
-
D. F. Heidel, P. W. Marshall, K. A. LaBel, J. R. Schwank, K. P. Rodbell, M. C. Hakey, M. D. Berg, P. E. Dodd, M. R. Friendlich, A. D. Phan, C. M. Seidleck, M. R. Shaneyfelt, and M. A. Xapsos, "Low energy proton single-event-upset test results on 65 nm SOI SRAM," IEEE Trans. Nucl. Sci., vol. 55, no. 6, pp. 3394-3400, Dec. 2008.
-
(2008)
IEEE Trans. Nucl. Sci.
, vol.55
, Issue.6
, pp. 3394-3400
-
-
Heidel, D.F.1
Marshall, P.W.2
Label, K.A.3
Schwank, J.R.4
Rodbell, K.P.5
Hakey, M.C.6
Berg, M.D.7
Dodd, P.E.8
Friendlich, M.R.9
Phan, A.D.10
Seidleck, C.M.11
Shaneyfelt, M.R.12
Xapsos, M.A.13
-
15
-
-
45749130595
-
Alpha-particle-induced upsets in advanced CMOS circuits and technology
-
D. F. Heidel, K. P. Rodbell, E. H. Cannon, C. Cabral, Jr., M. S. Gordon, P. Oldiges, and H. H. K. Tang, "Alpha-particle-induced upsets in advanced CMOS circuits and technology," IBM J. Res. Dev., vol. 52, no. 3, 2008.
-
(2008)
IBM J. Res. Dev.
, vol.52
, Issue.3
-
-
Heidel, D.F.1
Rodbell, K.P.2
Cannon, E.H.3
Cabral Jr., C.4
Gordon, M.S.5
Oldiges, P.6
Tang, H.H.K.7
-
16
-
-
79959420891
-
Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM
-
Dec., submitted for publication
-
D. F. Heidel, "Single-event upsets and multiple-bit upsets on a 45 nm SOI SRAM," in Proc. IEE Radiat. Effects DataWorkshop Rec. (NSREC 2009), Dec. 2009, submitted for publication.
-
(2009)
Proc. IEE Radiat. Effects DataWorkshop Rec. (NSREC 2009)
-
-
Heidel, D.F.1
-
17
-
-
78650419334
-
Soft error sensitivities in 90 nm bulk CMOS SRAMs
-
R. K. Lawrence, J. F. Ross, N. F. Haddad, R. A. Reed, and D. R. Albrecht, "Soft error sensitivities in 90 nm bulk CMOS SRAMs," in Proc. IEE Radiat. Effects Data Workshop Rec., pp. 71-75.
-
Proc. IEE Radiat. Effects Data Workshop Rec.
, pp. 71-75
-
-
Lawrence, R.K.1
Ross, J.F.2
Haddad, N.F.3
Reed, R.A.4
Albrecht, D.R.5
-
18
-
-
78650420329
-
MUSCA SEP3 contributions to investigate the direct ionization proton upset in 65 nm technology for space, atmospheric and ground applications
-
submitted for publication
-
G. Hubert et al., "MUSCA SEP3 contributions to investigate the direct ionization proton upset in 65 nm technology for space, atmospheric and ground applications," in Proc. IEE Radiat. Effects Data Workshop Rec., submitted for publication.
-
Proc. IEE Radiat. Effects Data Workshop Rec.
-
-
Hubert, G.1
-
19
-
-
72349096704
-
Impact of low-energy proton induced upsets on test methods and rate predictions
-
Dec.
-
B. D. Sierawski, J. A. Pellish, R. A. Reed, R. D. Schrimpf, K. M. Warren, R. A.Weller,M. H.Mendenhall, J. D. Black, A. D. Tipton, M. A. Xapsos, R. C. Baumann, X. Deng, M. J. Campola, M. R. Friendlich, H. S. Kim, A. M. Phan, and C. M. Seidleck, "Impact of low-energy proton induced upsets on test methods and rate predictions," IEEE Trans. Nucl. Sci., vol. 56, no. 6, pp. 3085-3092, Dec. 2009.
-
(2009)
IEEE Trans. Nucl. Sci.
, vol.56
, Issue.6
, pp. 3085-3092
-
-
Sierawski, B.D.1
Pellish, J.A.2
Reed, R.A.3
Schrimpf, R.D.4
Warren, K.M.5
Weller, R.A.6
Mendenhall, M.H.7
Black, J.D.8
Tipton, A.D.9
Xapsos, M.A.10
Baumann, R.C.11
Deng, X.12
Campola, M.J.13
Friendlich, M.R.14
Kim, H.S.15
Phan, A.M.16
Seidleck, C.M.17
-
20
-
-
21644436688
-
High performance and low power transistors integrated in 65 nm bulk CMOS technology
-
San Fransisco, CA, Dec.
-
Z. Luo, A. Steegen, M. Eller, R.Mann, C. Baiocco, P. Nguyen, L. Kim, M. Hoinkis, V. Ku, V. Klee, F. Jamin, P. Wrschka, P. Shafer, W. Lin, S. Fang, A. Ajmera, W. Tan, D. Park, R. Mo, J. Lian, D. Vietzke, C. Coppock, A. Vayshenker, T. Hook, V. Chan, K. Kim, A. Cowley, S. Kim, E. Kaltalioglu, B. Zhang, S. Marokkey, Y. Lin, K. Lee1, H. Zhu, M. Weybright, R. Rengarajan, J. Ku, T. Schiml, J. Sudijono, I. Yang, and C.Wann, "High performance and low power transistors integrated in 65 nm bulk CMOS technology," in Proc. Int. Electron Device Meet. Tech. Dig., San Fransisco, CA, Dec. 2004.
-
(2004)
Proc. Int. Electron Device Meet. Tech. Dig.
-
-
Luo, Z.1
Steegen, A.2
Eller, M.3
Mann, R.4
Baiocco, C.5
Nguyen, P.6
Kim, L.7
Hoinkis, M.8
Ku, V.9
Klee, V.10
Jamin, F.11
Wrschka, P.12
Shafer, P.13
Lin, W.14
Fang, S.15
Ajmera, A.16
Tan, W.17
Park, D.18
Mo, R.19
Lian, J.20
Vietzke, D.21
Coppock, C.22
Vayshenker, A.23
Hook, T.24
Chan, V.25
Kim, K.26
Cowley, A.27
Kim, S.28
Kaltalioglu, E.29
Zhang, B.30
Marokkey, S.31
Lin, Y.32
Lee, K.33
Zhu, H.34
Weybright, M.35
Rengarajan, R.36
Ku, J.37
Schiml, T.38
Sudijono, J.39
Yang, I.40
Wann, C.41
more..
|