Properties of ZnO Thin Films Grown on Si (100) Substrates by Pulsed Laser Deposition

Journal of Materials Science and Technology

Volumn 26, Issue 11, 2010, Pages 973-976

  Jang, Young Rae ^a   Yoo, Keon Ho ^a   Park, Seung Min ^a  

^a Kyung Hee University   (South Korea)

Author keywords

Photoluminescence; Pulsed laser deposition; ZnO

Indexed keywords

FIELD EMISSION SCANNING ELECTRON MICROSCOPY; GRAZING-INCIDENCE X-RAY DIFFRACTION; OPTIMUM CONDITIONS; OPTIMUM GROWTH CONDITIONS; OXYGEN PARTIAL PRESSURE; PEAK INTENSITY; PL SPECTRA; PULSED LASER; ROOM TEMPERATURE; SI (100) SUBSTRATE; STRONG CORRELATION; SUBSTRATE TEMPERATURE; UV EMISSIONS; VISIBLE EMISSIONS; XPS SPECTRA; ZNO; ZNO THIN FILM;

BINDING ENERGY; DEPOSITION; FIELD EMISSION; FIELD EMISSION MICROSCOPES; METALLIC FILMS; OPTICAL FILMS; OXYGEN; PARTIAL PRESSURE; PHOTOLUMINESCENCE; POSITIVE IONS; PULSED LASER DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

PULSED LASERS;

EID: 78650379524     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1005-0302(10)60158-2     Document Type: Article

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