Ab initio study of palladium and silicon carbide

Philosophical Magazine

Volumn 91, Issue 3, 2011, Pages 458-467

  Schuck, Paul C ^a   Shrader, David ^b   Stoller, Roger E ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

^b UNIVERSITY OF WISCONSIN MADISON   (United States)

Author keywords

ab initio; DFT; palladium; SiC; silicon carbide

Indexed keywords

AB INITIO; AB INITIO METHOD; AB INITIO STUDY; CHARGED STATE; DFT; INTERSTITIALS; LOCAL SPIN DENSITY APPROXIMATION; MIGRATION ENERGY; P-TYPE DOPING; SIC; TETRAHEDRAL SITES;

DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); PALLADIUM; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 78650377795     PISSN: 14786435     EISSN: 14786443     Source Type: Journal    
DOI: 10.1080/14786435.2010.521528     Document Type: Article

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