Anti-site pair in SiC: A model of the DI center

Physica B: Condensed Matter

Volumn 340-342, Issue , 2003, Pages 175-179

  Gali, A ^a   Deak P ^a   Rauls, E ^b   Son, N T ^c   Ivanov, I G ^c   Carlsson, F H C ^c   Janzen E ^c   Choyke, W J ^d  

^a BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

^b UNIVERSITY OF PADERBORN   (Germany)

^c LINKÖPING UNIVERSITY   (Sweden)

^d UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

Photoluminescence center; Silicon carbide

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRONIC PROPERTIES; ENERGY GAP; EXCITONS; ION IMPLANTATION; IRRADIATION; LOW TEMPERATURE EFFECTS; MOLECULAR BEAM EPITAXY; PARAMAGNETISM; PHOTOLUMINESCENCE; POWER ELECTRONICS; QUENCHING;

HYPERFINE CONSTANT; INTRINSIC DEFECTS;

SILICON CARBIDE;

EID: 0345873473     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2003.09.043     Document Type: Conference Paper

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