Two-dimensional electron gas formed in a back-gated undoped heterostructure

Applied Physics Letters

Volumn 72, Issue 14, 1998, Pages 1745-1747

  Hirayama, Y ^a   Muraki, K ^a   Saku, T ^a  

^a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000895451     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.121171     Document Type: Article

References (14)

1. B. E. Kane, L. N. Pfeiffer, K. W. West, and C. K. Harnett, Appl. Phys. Lett. 63, 2132 (1993).
2. B. E. Kane, L. N. Pfeiffer, and K. W. West, Appl. Phys. Lett. 67, 1262 (1995).
3. J. Herfort and Y. Hirayama, Appl. Phys. Lett. 69, 3360 (1996).
4. Y. Hirayama, J. Appl. Phys. 80, 588 (1996);
5. Jpn. J. Appl. Phys., Part 2 35, L1245 (1996).
6. U. Meirav, M. Heiblum, and F. Stern, Appl. Phys. Lett. 52, 1268 (1988).
7. T. Sajoto, M. Santos, J. J. Heremans, M. Shayegan, M. Heiblum, M. V. Weckwerth, and U. Meirav, Appl. Phys. Lett. 54, 840 (1989).
8. Y. Markus, U. Meirav, H. Shtrikman, and B. Laikhtman, Semicond. Sci. Technol. 9, 1297 (1994).
9. s causes a large electric field at the heterointerface (see Fig. 4) even though the background acceptor concentration is very low.
10. -2) after illumination.
11. B in the AlAs/AlGaAs sample is due to the accumulation of the scattering centers at the GaAs/AlGaAs heterointerface where the 2DEG is formed.
12. W. E. Spicer, N. Newman, C. J. Spindt, Z. Lilliental-Weber, and E. R. Weber, J. Vac. Sci. Technol. A 8, 2084 (1990).
13. R. Ludeke and G. Landgren, Phys. Rev. B 33, 5526 (1986).
14. G. Myburg, F. D. Auret, W. E. Meyer, and H. Burger, Thin Solid Films 249, 95 (1994).