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Physical Review B - Condensed Matter and Materials Physics

Volumn 63, Issue 24, 2001, Pages 2453091-2453098

Free GaAs surfaces studied using a back-gated undoped GaAs/AlxGa1-xAs heterostructure

(5) Kawaharazuka, A a Saku, T a Kikuchi, C A a Horikoshi, Y a Hirayama, Y a

a Kashino Diverse Brain Research Laboratory of NTT Communication Science Laboratories (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DERIVATIVE; ARSENIC DERIVATIVE; GALLIUM;

ARTICLE; CALCULATION; DENSITY; ELECTRON; GAS; LOW TEMPERATURE; MATHEMATICAL ANALYSIS; MODEL; STRUCTURE ANALYSIS; SURFACE PROPERTY;

EID: 0034895281 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (17)

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