Threshold voltage shift variation of a-Si:H TFTs with anneal time

Materials Research Society Symposium Proceedings

Volumn 1245, Issue , 2010, Pages 403-408

  Indluru, A ^a   Venugopal, S M ^b   Allee, D R ^b,c   Alford, T L ^a,b,c  

^a Arizona State University   (United States)

^b ARIZONA STATE UNIVERSITY   (United States)

^c School of Electrical Computer and Energy Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ANNEALING; BIAS VOLTAGE; LIQUID CRYSTAL DISPLAYS; TEMPERATURE MEASUREMENT; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE;

ACTIVE MATRIX LIQUID CRYSTAL DISPLAYS; ELECTRICAL PERFORMANCE; HIGH TEMPERATURE MEASUREMENT; HYDROGENATED AMORPHOUS SILICON (A-SI:H); INTERFACE TRAP DENSITY; POWER-LAW TIME DEPENDENCES; THIN-FILM TRANSISTOR (TFTS); THRESHOLD VOLTAGE SHIFTS;

THIN FILM TRANSISTORS;

EID: 78650356862     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1245-a19-02     Document Type: Conference Paper

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