Analysis and improvement of the switching behaviour of low voltage power MOSFETs with high current ratings under hard switching conditions

IEEE International Symposium on Industrial Electronics

Volumn , Issue , 2010, Pages 644-649

  Wittig, Bjoern ^a   Fuchs, Friedrich W ^a  

^a UNIVERSITY OF KIEL   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE GATE CONTROL; CONTROL METHODS; GATE DRIVE CIRCUITS; HIGH CURRENTS; LOW VOLTAGES; OVER-VOLTAGES; POWER MOSFETS; SWITCHING CONDITIONS; SWITCHING LOSS;

MOSFET DEVICES; OVERCURRENT PROTECTION; SWITCHING;

INDUSTRIAL ELECTRONICS;

EID: 78650356750     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISIE.2010.5637822     Document Type: Conference Paper

References (19)

1. A. Emadi, Handbook of Automotive Power Electronics and Motor Drives. CRC Press, Boca Raton, 2005.
2. A. Lindemann and S. Foerster, "Design aspects for power mosfet components in automotive electronics." Maribor: 12th International Power Electronics and Motion Control Conference, EPE-PEMC, 2006.
3. W. Franke, B. Carstens, F. Fuchs, and N. Eggert, "A detailed analysis of a power converter to buffer the battery voltage in lift trucks." Porto: Conference of the IEEE Industrial Electronics Society, 2009.
4. J. Berry, "Mosfet operating under hard switching mode: Voltage and current gradients control." European Conference on Power Electronics and Applications, 1991.
5. T. Shimizu and K. Wada, "A gate drive circuit of power mosfets and igbts for low switching losses." Daegu, Korea: 7th Internatonal Conference on Power Electronics, ICPE, 2007.
6. H. Yee, "An emi suppression mosfet driver." Proceedings of the Annual IEEE Applied Power Electronics Conference and Exposition, 1997.
7. B. Weis and M. Bruckmann, "A new gate driver circuit for improved turn-off characteristics of high current igbt modules." St. Louis: IEEE Industry Applications Conference, 1998.
8. M. Kimata, S. Chikai, T. Tanaka, and K. Ishii, "High performance gate drive circuit of high voltage ipms (hvipms)." Record. 29th Annual IEEE Power Electronics Specialists Conference, 1998.
9. V. John, B. Suh, and T. Lipo, "High-performance active gate drive for high-power igbts," IEEE Transactions on Industry Applications, vol. 35, no. 5, 1999.
10. N. Idir, R. Bausire, and J. Franchaud, "Active gate voltage control of turn-on di/dt and turn-off dv/dt in insulated gate transistors," IEEE Transactions on Power Electronics, vol. 21, no. 4, pp. 849-855, 2006.
11. H. Sawezyn and R. Bausire, "A feedback voltage control of insulated gate power transistors," Control and Intelligent Systems, vol. 31, no. 3, 2003.
12. J. Lutz, Halbleiter-Leistungsbauelemente - Physik, Eigenschaften, Zu-verlaessigkeit; Semiconductor Power Devices - Physic, Characteristics, Reliability. Springer Verlag, 2006.
13. B. Baliga, Fundamentals of Power Semiconductor Devices. Springer Verlag, New York, 2008.
14. NEC, Datasheet NP110N055PUG, Switching N-Channel Power MOS-FET, NEC Electronics Corporation, http://www.necel.com, 2009.
15. D. Schroeder, Leistungselektronische Bauelemente; Power Electronic Devices. Springer Verlag, Heidelberg, 2006.
16. H. Rothwangl and H. Schamboeck, "Advanced igbt control strategies improvement of the switching characteristics via active gate control." Toulouse: 10th European Conference on Power Electronics and Applications, EPE, 2003.
17. M. Helsper, Analyse und Verbesserung des Verhaltens von Planar- und Trench-IGBT-Modulen in hart bzw. weich schaltenden Applikationen; Analysis and Improvement of the Behaviour of Planar and Trench IBGT Modules in Hard and Soft Switching Applications. Thesis, Christian-Albrechts-University of Kiel, Shaker Verlag, Kiel, 2003.
18. M. Helsper and F. Fuchs, "Adaptation of igbt switching behaviour by means of active gate drive control for low and medium power." Toulouse: European Conference on Power Electronics and Applications, 2003.
19. IRF, HEXFET Power MOSFET IRFS3306PbF, Datasheet, International Rectifier, http://www.irf.com, 2009.