New gate driver circuit for improved turn-off characteristics of high current IGBT modules

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 2, Issue , 1998, Pages 1073-1077

  Weis, B ^a   Bruckmann, M ^a  

^a SIEMENS AG   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC LOSSES; ELECTRIC NETWORK SYNTHESIS; GATES (TRANSISTOR); OVERVOLTAGE PROTECTION; POWER CONVERTERS; POWER ELECTRONICS; TRANSIENTS;

INSULATED GATE BIPOLAR TRANSISTORS (IGBT);

BIPOLAR TRANSISTORS;

EID: 0032315385     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)