High performance gate drive circuit of high voltage IPMs (HVIPMs)

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2, Issue , 1998, Pages 1196-1200

  Kimata, Masahiro ^a   Chikai, Satoru ^a   Tanaka, Takeshi ^a   Ishii, Kazufumi ^a  

^a MITSUBISHI ELECTRIC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DRIVE CIRCUITS;

COMPUTER SIMULATION; ELECTRIC LOSSES; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; POWER CONVERTERS;

GATES (TRANSISTOR);

EID: 0031624323     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S. Igarashi, et al., "An Active Control Gate Drive Circuit for IGBTs to Realize Low-noise and Snubberless System", IEEE ISPSD 1997, pp. 69-72.
2. C. Gerster, P. Holer, "Gate-Controlled dv/dt-and di/dt-Litnitation in High Power IGBT Converters", EPE Journal, Vol. 5, No. 3/4, Jan. 1996, pp. li-16.
3. M. Kimata, et al., "Snuut IGBT Model and Its Application for Power Converter Design", IEEE IAS 1994, pp. 1168-1173.