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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 28, Issue 6, 2010, Pages 1271-1273

Structural and optical properties of self-assembled InAs quantum dot molecules on GaAs substrates

(4) Tian, Peng a Huang, Lirong a Yu, Yi a Huang, Dexiu a

a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; ORGANIC CHEMICALS; SEMICONDUCTING GALLIUM; SEMICONDUCTING INDIUM;

EMISSION WAVELENGTH; GAAS SUBSTRATES; GROWTH PARAMETERS; INAS; INAS QUANTUM DOTS; METALORGANIC CHEMICAL VAPOR DEPOSITION; RED SHIFT; SELF-ASSEMBLED; STRUCTURAL AND OPTICAL PROPERTIES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 78650114544 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3516010 Document Type: Article

Times cited : (1)

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