Intrinsic high-frequency characteristics of graphene layers

New Journal of Physics

Volumn 12, Issue , 2010, Pages

  Moon, Sungwon ^a   Jung, Kwangrock ^a   Park, Konggyun ^a   Kim, H Jin ^a   Lee, Chang Won ^b   Baik, Chan Wook ^b   Kim, Jong Min ^b  

^a Seoul National University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CIRCUIT PARAMETER; ELECTRODE CONTACTS; GRAPHENE DEVICES; GRAPHENE LAYERS; GRAPHENE SHEETS; HIGH FREQUENCY CHARACTERISTICS; HIGH-FREQUENCY TRANSPORT; LUMPED CIRCUIT MODELS; METAL ELECTRODES; NUMBER OF LAYERS; RADIO FREQUENCIES; RF APPLICATIONS; ROOM TEMPERATURE; TRANSMISSION PROPERTY; TWO-PORT NETWORK;

INDUCTANCE; LUMPED PARAMETER NETWORKS;

GRAPHENE;

EID: 78650087810     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/12/11/113031     Document Type: Article

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