A 1.2-V 10-μ W NPN-based temperature sensor in 65-nm CMOS with an inaccuracy of 0.2 °c (3σ) from - 70 °c to 125 °c

IEEE Journal of Solid-State Circuits

Volumn 45, Issue 12, 2010, Pages 2591-2601

  Sebastiano, Fabio ^a   Breems, Lucien J ^a   Makinwa, Kofi A A ^b   Drago, Salvatore ^a   Leenaerts, Domine M W ^a   Nauta, Bram ^c  

^a NXP SEMICONDUCTORS   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

CMOS analog integrated circuits; sigma delta modulation; smart sensors; temperature sensors

Indexed keywords

CMOS ANALOG INTEGRATED CIRCUITS; CMOS PROCESSS; CORRELATED DOUBLE SAMPLING; DIGITAL OUTPUT; DYNAMIC ELEMENT MATCHING; DYNAMIC TECHNIQUES; N-P-N TRANSISTORS; ROOM TEMPERATURE; SENSING ELEMENTS; SIGMA DELTA MODULATION; TEMPERATURE RANGE;

ANALOG CIRCUITS; CMOS INTEGRATED CIRCUITS; INTEGRATED CIRCUITS; LINEAR INTEGRATED CIRCUITS; MODULATORS; SMART SENSORS; TEMPERATURE SENSORS;

DELTA SIGMA MODULATION;

EID: 78650073057     PISSN: 00189200     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSSC.2010.2076610     Document Type: Conference Paper

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