OTFT device modeling with Verilog-A language including non-linear effects of source/drain contact resistance

Journal of the Korean Physical Society

Volumn 48, Issue SUPPL. 1, 2006, Pages

  Yip, Gordon ^a   Sugimoto, Shintarou ^a   Hattori, Reiji ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Contact resistance; Device modeling; OTFT; Schottky barrier; Verilog A

Indexed keywords

EID: 33644507427     PISSN: 03744884     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (6)

1. R. Hattori and J. Kanicki, Japan J. Appl. Phys. 42, L907 (2003).
2. J. H. Lee, S. H. Kim, G. H. Kim, S. C. Lim, H. Lee, J. Jang and T. Zyung, Synthetic Metals 139, 445 (2003).
3. H. Klauk, D. J. Gundlach, J. A. Nichols and T. N. Jackson, IEEE Transactions on Electron Devices 46, 1258 (1999).
4. C. K. Song, K. D. Kim, Y. X. Xu, M. W. Lee and K. H. Kim, SID Digest P-7, 228 (2003).
5. S. W. Depp, A. Juliana and B. G. Huth, Proc. 1980 Int. Electron Device Mtg, 703 (1980).
6. P. W. M. Blom and M. C. J. M. Vissenberg, Materials Science & Engineering R-Reports 27, 53 (2000).