Uniaxial strain effects on silicon nanowire pMOSFET and single-hole transistor at room temperature

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2008, Pages

  Jeong, Yeonjoo ^a   Chen, Jiezhi ^a   Saraya, Takuya ^a   Hiramoto, Toshiro ^a  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DRIFT REGIONS; EFFECTIVE MASS; ENERGY LEVEL SPACINGS; OSCILLATION CURRENTS; PMOSFET; ROOM TEMPERATURES; SILICON NANOWIRES; SINGLE-HOLE TRANSISTORS; STRAIN EFFECTS; TUNNELING PROBABILITIES; UNI-AXIAL STRAINS; UNIAXIAL STRESS;

ELECTRON DEVICES; MOSFET DEVICES; NANOWIRES;

MODULATION;

EID: 64549144550     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2008.4796808     Document Type: Conference Paper

References (13)

1. C. Auth et al., VLSI Sym. Tech. Dig. p. 128, 2008.
2. K. Shimizu, and T. Hiramoto, IEDM Tech. Dig. p. 715, 2007.
3. Y.-J. Jeong, K. Miyaji, and T. Hiramoto, Silicon Nanoelectron-ics Workshop, M0930, 2008.
4. S. E. Thompson, G. Sun, Y.S. Choi, and T. Nishida, IEEE T-ED, 53, p.1010, 2006.
5. S. Kobayashi, M, Saitoh, and K. Uchida, IEDM, p. 707, 2007.
6. M. Saitoh, H. Harata, and T. Hiramoto, IEDM, p. 187, 2004.
7. K. Miyaji, M. Saitoh, and T. Hiramoto, Appl. Phys. Lett., 88, 143505, 2006.
8. M. Kobayashi, and T. Hiramoto, IEDM, p. 1007, 2006.
9. H. Majima, H. Ishikuro, and T. Hiramoto, IEDM, p. 379, 1999.
10. H. Majima, Y. Saito, and T. Hiramoto, IEDM, p. 733, 2001.
11. S. Suthram, J.C. Ziegert, T. Nishida, and S.E. Thompson, IEEE EDL, 28, p. 58, 2007.
12. S. E. Thompson et al., IEEE EDL, 25, p. 191, 2004.
13. M. V. Fischetti, Z. Ren, P.M. Solomon, M. Yang, and K. Rim, J. Appl. Phys., 94, 1079, 2003.