Self-template growth of ferroelectric Bi4Ti3O 12 nanoplates via flux-mediated epitaxy with VOx

Crystal Growth and Design

Volumn 10, Issue 12, 2010, Pages 5233-5237

  Imai, A ^a,b   Nagarajan, V ^b   Takahashi, R ^c   Lippmaa, M ^c   Matsumoto, Y ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b UNIVERSITY OF NEW SOUTH WALES   (Australia)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BULK SINGLE CRYSTALS; FLUX MEDIUM; NANO-PLATE; NANOPLATES; PIEZORESPONSE FORCE MICROSCOPY; RUTILE TIO; SELF-ASSEMBLED; SINGLE-BIT; SRTIO; TEMPLATE GROWTH; VANADIUM OXIDES;

DOMAIN WALLS; EPITAXIAL GROWTH; FERROELECTRICITY; NANOSTRUCTURES; OXIDE MINERALS; STRONTIUM ALLOYS; VANADIUM; VANADIUM COMPOUNDS;

SINGLE CRYSTALS;

EID: 78649959811     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg101038z     Document Type: Article

References (28)

1. Lettieri, J.; Jia, Y.; Urbanik, M.; Weber, C. I.; Maria, J.-P.; Schlom, D. G.; Li, H.; Ramesh, R.; Uecker, R.; Reiche, P. Appl. Phys. Lett. 1998, 73, 2923-2925
2. Funakubo, H.; Mizutani, N.; Yonetsu, M.; Saiki, A.; Shinozaki, K. J. Electroceram. 1999, 4 (S1) 25-32
3. Kan, D.; Takeuchi, I. J. Appl. Phys. 2010, 108, 014104
4. Cummins, S. E.; Cross, L. E. J. Appl. Phys. 1968, 39, 2268-2274
5. Lee, H. N.; Hesse, D. Appl. Phys. Lett. 2002, 80, 1040-1042
6. Watanabe, T.; Funakubo, H.; Saito, K.; Suzuki, T.; Fujimoto, M.; Osada, M.; Noguchi, Y.; Miyayama, M. Appl. Phys. Lett. 2002, 81, 1660-1662
7. Lee, H. N.; Hesse, D.; Zakharov, N.; Gösele, U. Science 2002, 296, 2006-2009
8. Takahashi, R.; Yonezawa, Y.; Nakajima, K.; Chikyow, T.; Koinuma, H.; Matsumoto, Y. Appl. Phys. Lett. 2006, 88, 152904
9. Matsumoto, Y.; Takahashi, R.; Koinuma, H. J. Cryst. Growth 2005, 275, 325-330
10. Takahashi, R.; Matsumoto, Y.; Kohno, T.; Kawasaki, M.; Koinuma, H. J. Cryst. Growth 2004, 262, 308-312
11. Takahashi, R.; Yonezawa, Y.; Ohtani, M.; Kawasaki, M.; Nakajima, K.; Chikyow, T.; Koinuma, H.; Matsumoto, Y. Adv. Funct. Mater. 2006, 16, 485-491
12. Lim, S.-H.; Murakami, M.; Yang, J. H.; Young, S. -Y.; Hattrick-Simpers, J.; Wuttig, M.; Salamanca-Riba, L. G.; Takeuchi, I. Appl. Phys. Lett. 2008, 92, 012918
13. Anbusathaiah, V.; Cheng, C. J.; Lim, S. H.; Murakami, M.; Salamanca-Riba, L. G.; Takeuchi, I.; Nagarajan, V. Appl. Phys. Lett. 2008, 93, 192906
14. Wagner, R. S.; Ellis, W. C. Appl. Phys. Lett. 1964, 4, 89-90
15. Johnson, J. C.; Choi, H. J.; Kuntsen, K. P.; Schaller, R. D.; Yang, P.; Saykally, R. J. Nat. Mater. 2002, 1, 106-110
16. Yanagida, T.; Nagashima, K.; Tanaka, H.; Kawai, T. J. Appl. Phys. 2008, 104, 016101
17. Kayastha, V.; Dimovski, S.; Gogotsi, Y.; Yap, Y. K. Appl. Phys. Lett. 2004, 85, 3265-3267
18. Takahashi, R.; Kubota, H.; Murakami, M.; Yamamoto, Y.; Matsumoto, Y.; Koinuma, H. J. Comb. Chem. 2004, 6, 50-53
19. Lee, H. N.; Hesse, D.; Zakharov, N.; Lee, S. K.; Gösele, U. J. Appl. Phys. 2003, 93, 5592-5601
20. Anbusathaiah, V.; Aggarwal, S.; Nagarajan, V. Appl. Phys. Lett. 2006, 89, 132912
21. Shimada, S.; Kodaira, K.; Matsushita, T. J. Cryst. Growth 1977, 41, 317-320
22. Murakami, M.; Matsumoto, Y.; Nakajima, K.; Makino, T.; Segawa, T.; Chikyow, T.; Ahmet, P.; Kawasaki, M.; Koinuma, H. Appl. Phys. Lett. 2001, 78, 2664-2666
23. Geller, S.; Bala, V. B. Acta Crystallogr. 1956, 9, 1019-1025
24. JCPDS card, No. 35-734.
25. JCPDS card, No. 45-946.
26. JCPDS card, No. 21-1276.
27. JCPDS card, No. 35-795.
28. Katayama, S.; Noguchi, Y.; Miyayama, M. Adv. Mater. 2007, 19, 2552-2555