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Advanced Functional Materials

Volumn 16, Issue 4, 2006, Pages 485-491

Perfect Bi4Ti3O12 single-crystal films via flux-mediated epitaxy

(8) Takahashi, Ryota a,c Yonezawa, Yoshiyuki a,d Ohtani, Makoto e Kawasaki, Masashi c,e Nakajima, Kiyomi c Chikyow, Toyohiro c Koinuma, Hideomi b,c,f Matsumoto, Yuji a,b

a TOKYO INSTITUTE OF TECHNOLOGY (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

d FUJI ELECTRIC CO (Japan)

e TOHOKU UNIVERSITY (Japan)

f UNIVERSITY OF TOKYO (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BISMUTH COMPOUNDS; FERROELECTRIC MATERIALS; RANDOM ACCESS STORAGE; THIN FILMS; TITANIUM COMPOUNDS; VAPOR PHASE EPITAXY;

FERROELECTRIC RANDOM-ACCESS MEMORIES; FLUX-MEDIATED EPITAXY; OPTIMAL PHYSICAL PROPERTIES; STOICHIOMETRIC SINGLE-CRYSTAL OXIDE FILMS;

SINGLE CRYSTALS;

EID: 33644902354 PISSN: 1616301X EISSN: 16163028 Source Type: Journal
DOI: 10.1002/adfm.200500390 Document Type: Article

Times cited : (42)

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