Flux-mediated epitaxy: General application in vapor phase epitaxy to single crystal quality of complex oxide films

Journal of Crystal Growth

Volumn 275, Issue 1-2, 2005, Pages 325-330

  Matsumoto, Y ^a   Takahashi, R ^a   Koinuma, H ^a,b,c  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

A1. Phase equilibria; A2. Single crystal growth; A3. Flux; A3. Pulsed laser deposition; A3. Vapor phase epitaxy; B1. Oxides

Indexed keywords

EPITAXIAL GROWTH; OXIDES; PHASE EQUILIBRIA; PULSED LASER DEPOSITION; THERMAL EFFECTS; THIN FILMS; VAPOR PHASE EPITAXY;

FLUX; MELTS; OXIDE FILMS; SINGLE CRYSTAL GROWTH;

SINGLE CRYSTALS;

EID: 15844400858     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2004.10.091     Document Type: Conference Paper

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