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Journal of Applied Physics

Volumn 108, Issue 1, 2010, Pages

Effect of substrate orientation on lattice relaxation of epitaxial BiFeO3 thin films

(2) Kan, Daisuke a,b Takeuchi, Ichiro a

a UNIVERSITY OF MARYLAND (United States)

b KYOTO UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BIAXIAL STRAINS; DIFFERENT PROCESS; DOMAIN STRUCTURE; DOMINANT PROCESS; EPITAXIAL STRAIN; GRADUAL CHANGES; LATTICE PARAMETERS; LATTICE RELAXATION; MONOCLINIC STRUCTURES; RHOMBOHEDRAL STRUCTURES; SRTIO; STRUCTURAL SYMMETRY; SUBSTRATE ORIENTATION; SUBSTRATE SURFACE; X-RAY RECIPROCAL SPACE MAPPING;

CRYSTAL ORIENTATION; LATTICE CONSTANTS; MAPPING; THIN FILMS; VAPOR DEPOSITION;

SUBSTRATES;

EID: 77955184910 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3452360 Document Type: Article

Times cited : (49)

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