A stochastic model of bipolar resistive switching in metal-oxide-based memory

2010 Proceedings of the European Solid State Device Research Conference, ESSDERC 2010

Volumn , Issue , 2010, Pages 396-399

  Makarov, Alexander ^a   Sverdlov, Viktor ^a   Selberherr, Siegfried ^a  

^a INSTITUTE FOR MICROELECTRONICS   (Austria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON OCCUPATION; HIGH ROBUSTNESS; HYSTERESIS CYCLES; METAL-OXIDE; OXIDE IONS; RESISTIVE RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MECHANISMS; SWITCHING TIME; TEMPERATURE DEPENDENCE;

COMPUTER SIMULATION; EMPLOYMENT; PROBABILITY DISTRIBUTIONS; RANDOM ACCESS STORAGE; SOLID STATE DEVICES; STOCHASTIC SYSTEMS; SWITCHING SYSTEMS;

STOCHASTIC MODELS;

EID: 78649937357     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ESSDERC.2010.5618201     Document Type: Conference Paper

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