Electrical and optical properties of zinc oxide thin films deposited using atomic layer deposition

Journal of the Korean Ceramic Society

Volumn 47, Issue 4, 2010, Pages 353-356

  Kim, Jeong Eun ^a   Bae, Seung Muk ^a   Yang, Heesun ^a   Hwang, Jin Ha ^a  

^a Hong Ik University   (South Korea)

Author keywords

Atomic layer deposition; Band gaps; Resistivity; Spectroscopic ellipsometry; Zinc oxide

Indexed keywords

BAND GAPS; DEPOSITION TEMPERATURES; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRONIC CONCENTRATION; ELECTRONIC MOBILITY; EXTINCTION COEFFICIENTS; HALL MEASUREMENTS; LOW TEMPERATURES; PHOTON ENERGY; RESISTIVITY; UV-VISIBLE SPECTROPHOTOMETRY; ZINC OXIDE THIN FILMS; ZNO; ZNO THIN FILM;

ATOMIC LAYER DEPOSITION; ATOMIC SPECTROSCOPY; ATOMS; CARRIER CONCENTRATION; DEPOSITION; ELECTRIC PROPERTIES; ENERGY GAP; OXIDE FILMS; SPECTROSCOPIC ELLIPSOMETRY; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 78649846453     PISSN: 12297801     EISSN: None     Source Type: Journal    
DOI: 10.4191/KCERS.2010.47.4.353     Document Type: Article

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