Channeled implants in 6H silicon carbide

Materials Science Forum

Volumn 338, Issue , 2000, Pages

  Janson, M S ^a   Hallen A ^a   Godignon, P ^b   Kuznetsov, A Yu ^a   Linnarsson, M K ^a   Morvan, E ^b   Svensson, B G ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY   (Sweden)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM; COMPUTER SIMULATION; ION IMPLANTATION; MONTE CARLO METHODS; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING BORON; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS;

CHANNELING IMPLANTS;

SILICON CARBIDE;

EID: 18844463746     PISSN: 02555476     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (6)

1. S. Ahmed, C. J. Barbero, T. W. Sigmon, and J. W. Erickson, J. Appl. Phys. 65 (1994), p. 67-69.
2. E. Morvan, P. Godinon, M. Vellvehi, A. Hallén, M. K. Linnarsson, and A.Yu. Kuznetsov, Appl. Phys. Lett. 74 (1999). p. 3990-3992.
3. D.S. Gemmel, Review of modern physics 46 (1974), p. 129-227.
4. M.S. Janson, to be published.
5. J.F. Ziegler, J.P. Biersack, and Y. Littmark, The stopping and range of ions in solids (Pergamon press, 1985).
6. E. Morwan, N. Mestres, F. J. Campos, J. Pascual, A. Hállen, M. Linnarsson, and A. Yu. Kuznetsov, these conference proceedings, p. 893