Electronic stopping power for Monte Carlo simulation of ion implantation into SiC

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 147, Issue 1-4, 1999, Pages 68-73

  Morvan, E ^a   Godignon, P ^a   Berberich, S ^a   Vellvehi, M ^a   Millan J ^a  

^a UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

Author keywords

Dopant profiles; Electronic stopping; Ion implantation; Silicon carbide

Indexed keywords

COMPUTER SIMULATION; CRYSTALS; ELECTRON ENERGY LEVELS; ELECTRON GAS; MATHEMATICAL MODELS; MONTE CARLO METHODS; PROBABILITY DENSITY FUNCTION; SECONDARY ION MASS SPECTROMETRY; SILICON CARBIDE;

AB INITIO PSEUDOPOTENTIAL CALCULATIONS; ELECTRONIC STOPPING POWER; NONLINEAR DENSITY FUNCTIONAL;

ION IMPLANTATION;

EID: 0032712974     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00548-5     Document Type: Article

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