Polishing behaviors of ceria abrasives on silicon dioxide and silicon nitride CMP

Powder Technology

Volumn 206, Issue 3, 2011, Pages 239-245

  Oh, Myoung Hwan ^a   Nho, Jun Seok ^b   Cho, Seung Beom ^b   Lee, Jae Seok ^a   Singh, Rajiv K ^a  

^a J Crayton Pruitt Family Department of Biomedical Engineering   (United States)

^b LG Chemical Ltd   (South Korea)

Author keywords

Ceria; Chemical mechanical polishing (CMP); Flux method; Grain growth accelerator; Sintering process

Indexed keywords

ABRASIVE SIZE; CALCINATION TEMPERATURE; CERIA; CHEMICAL MECHANICAL POLISHING (CMP); CMP PROCESS; FLUX METHOD; FLUX METHODS; MECHANICAL MILLING; MORPHOLOGICAL CHARACTERISTIC; NITRIDE FILMS; POLISHING PROCESSS; PRIMARY PARTICLE SIZE; REMOVAL RATE; SILICON DIOXIDE; SILICON DIOXIDE FILM; SILICON NITRIDE CMP; SINTERING PROCESS; SURFACE UNIFORMITY;

ABRASIVES; BEHAVIORAL RESEARCH; CALCINATION; CERIUM COMPOUNDS; CHEMICAL MECHANICAL POLISHING; GRAIN GROWTH; GRAIN SIZE AND SHAPE; MECHANICAL ALLOYING; MILLING (MACHINING); OXIDE FILMS; POLISHING; POTASSIUM; POTASSIUM HYDROXIDE; SILICA; SILICON NITRIDE; SILICON OXIDES; SINTERING;

CHEMICAL POLISHING;

CERIUM OXIDE; POTASSIUM HYDROXIDE; SILICON DIOXIDE; SILICON NITRIDE;

ARTICLE; BIOPOLISHING; CHEMICAL REACTION; CONCENTRATION PROCESS; CRYSTAL STRUCTURE; CRYSTALLIZATION; FIELD EMISSION SCANNING ELECTRON MICROSCOPY; PARTICLE SIZE; PHYSICAL PHENOMENA; SOLID STATE; X RAY DIFFRACTION;

EID: 78649710945     PISSN: 00325910     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.powtec.2010.09.025     Document Type: Article

References (18)

1. Cook L.M. Chemical processes in glass polishing. J. Non-Cryst. Solids 1990, 120:152-171.
2. Hoshino T., Kurata Y., Terasaki Y., Susa K. Mechanism of polishing of SiO2 films by CeO2 particles. J. Non-Cryst. Solids 2001, 283:129-136.
3. Yoon I.Y., Jeong J.Y., Park Y.B., Lee D.W., Ryu H.H., Lee W.G. Influence of high selectivity slurry in shallow trench isolation CMP on junction leakage characteristics. Electrochem. Solid-State Lett. 2002, 5(4):G19-G21.
4. Lim D.S., Ahn J.W., Park H.S., Shin J.H. The effect of CeO2 abrasive size on dishing and step height reduction of silicon oxide film in STI-CMP. Surf. Coat. Technol. 2005, 200:1751-1754.
5. Kang H.G., Park H.S., Paik Test U. Effects of abrasive particle size and molecular weight of poly(acrylic acid) in ceria slurry on removal selectivity of SiO2/Si3N4 films in shallow trench isolation chemical mechanical planarization. J. Mater. Res. 2007, 22(3):777-787.
6. Janos P., Petrak M. Preparation of ceria-based polishing powders from carbonates. J. Mater. Sci. 1991, 26:4062-4066.
7. Lee S.I., Hwang J., Kim H., Jeong H. Investigation of polishing characteristics of shallow trench isolation chemical mechanical planarization with different types of slurries. Microelectron. Eng. 2007, 84:626-630.
8. Lee S.H., Lu Z.L., Babu S.V., Matijevic E. Chemical mechanical polishing of thermal oxide films using silica particles coated with ceria. J. Mater. Res. 2002, 17(10):2744-2749.
9. Wu N.C., Shi E.W., Zheng Y.Q., Li W.J. Effect of pH medium on hydrothermal synthesis of nanocrystalline cerium (IV) oxide powders. J. Am. Ceram. Soc. 2002, 85(10):2462-2468.
10. West A.R. Solid State Chemistry and its Applications 1995, Wiley, New York.
11. Bondioli F., Bonamartini Corradi A., Leonelli C., Manfredini T. Nanosized CeO2 powders obtained by flux method. Mater. Res. Bull. 1999, 34:2159-2166.
12. Kleinlogel C., Gauckler L.J. Sintering of nanocrystalline CeO2 ceramics. Adv. Mater. 2001, 13(14):1081-1085.
13. Wakita H., Kinoshita S. A synthetic study of the solid solutions in the systems and La2(CH3)3 8H2O-Ce2(CO3)3 8H2O and La(OH)CO3-Ce(OH)CO3. Bull. Chem. Soc. Jpn 1979, 52(2):428-432.
14. Allen T. Particle size measurement 1997, Vol. 1. Chapman and Hall, New-York. 5th ed.
15. Kim Y.H., Kim S.K., Kim N.S., Park J.G., Paik U. Crystalline structure of ceria particles controlled by the oxygen partial pressure and STI CMP performances. Ultramicroscopy 2008, 108:1292-1296.
16. Mahajan U., Bielmann M., Singh R.K. Effect of particle size during tungsten chemical-mechanical polishing. Mater. Res. Soc. Symp. Proc. 1999, 566:27-31.
17. Choi W., Abiade J., Lee S.M., Singh R.K. Effects of slurry particles on silicon dioxide CMP. J. Electrochem. Soc. 2004, 158(8):G512-G522.
18. Mahajan U., Belmann M., Singh R.K. In situ lateral force technique for dynamic surface roughness measurements during chemical mechanical polishing. Electrochem. Solid-State Lett. 1999, 2:46-48.