Influence of high selectivity slurry in shallow trench isolation CMP on junction leakage characteristics

Electrochemical and Solid-State Letters

Volumn 5, Issue 4, 2002, Pages

  Yoon, Il Young ^a   Jeong, Jong Yeul ^a   Park, Young Bae ^a   Lee, Dok Won ^a   Ryu, Hyuk Hyun ^a   Lee, Won Gyu ^a  

^a Hynix Semiconductor Inc   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CATALYST SELECTIVITY; CHEMICAL MECHANICAL POLISHING; ETCHING; LEAKAGE CURRENTS; NITRIDES; OXIDES; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; THICKNESS MEASUREMENT; TRENCHING;

HIGH SELECTIVITY SLURRY; REVERSE ETCHBACK; SHALLOW TRENCH ISOLATION;

SLURRIES;

EID: 0036535468     PISSN: 10990062     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1454550     Document Type: Article

References (7)