Investigation of polishing characteristics of shallow trench isolation chemical mechanical planarization with different types of slurries

Microelectronic Engineering

Volumn 84, Issue 4, 2007, Pages 626-630

  Lee, Sang Ick ^a   Hwang, Jinho ^b   Kim, Hyoungjae ^c   Jeong, Haedo ^d  

^a Samsung Corning Co Ltd   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

^c Korea Institute of Industrial Technology   (South Korea)

^d Pusan National University   (South Korea)

Author keywords

Chemical mechanical planarization (CMP); High selectivity slurry; STI (Shallow trench isolation); Yield

Indexed keywords

CERIUM COMPOUNDS; FILTRATION; GATES (TRANSISTOR); OPTIMIZATION; SILICA; THRESHOLD VOLTAGE; WSI CIRCUITS;

CHEMICAL MECHANICAL PLANARIZATION (CMP); GATE OXIDE; HIGH SELECTIVITY SLURRY (HSS); PLANARIZATION; SHALLOW TRENCH ISOLATION (STI);

SLURRIES;

EID: 33847710290     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.12.004     Document Type: Article

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